? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c, r gs = 1m 150 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c76 a i dm t c = 25 c, pulse width limited by t jm 200 a i a t c = 25 c38 a e as t c = 25 c 500 mj dv/dt i s i dm ,, v dd v dss ,t j 175 c 15 v/ns p d t c = 25 c 350 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 5 a t j = 150 c 750 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 20 m trencht2 tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrnsic rectifier IXFA76N15T2 ixfp76n15t2 v dss = 150v i d25 = 76a r ds(on) 20m ds100176(08/09) features z international standard packages z 175c operating temperature z high current handling capability z fast intrinsic rectifier z dynamic dv/dt rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications advance technical information g = gate d = drain s = source tab = drain to-263 aa (ixfa) g d s to-220ab (ixfp) d (tab) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXFA76N15T2 ixfp76n15t2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 50 80 s c iss 5800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 490 pf c rss 85 pf t d(on) 17 ns t r 19 ns t d(off) 25 ns t f 14 ns q g(on) 97 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 29 nc q gd 30 nc r thjc 0.43 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 76 a i sm repetitive, pulse width limited by t jm 300 a v sd i f = 38a, v gs = 0v, note 1 1.5 v t rr 69 ns i rm 5.7 a q rm 197 nc notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 (external) i f = 38a, v gs = 0v -di/dt = 100a/ s v r = 75v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixfp) outline advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-263 (ixfa) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. collector 3. emitter 4. collector bottom side
? 2009 ixys corporation, all rights reserved IXFA76N15T2 ixfp76n15t2 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ds - volts i d - amperes v gs = 15v 10v 5v 7v 6v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 0 2 4 6 8 1012141618202224 v ds - volts i d - amperes v gs = 15v 10v 7v 8v 5v 6v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds - volts i d - amperes v gs = 15v 10v 7v 4 v 5 v 6 v fig. 4. r ds(on) normalized to i d = 38a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 76a i d = 38a fig. 5. r ds(on) normalized to i d = 38a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFA76N15T2 ixfp76n15t2 fig. 7. input admittance 0 20 40 60 80 100 120 140 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100 q g - nanocoulombs v gs - volts v ds = 75v i d = 38a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1,000.0 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s r ds (on) limit dc 1ms 10ms 100s ixys ref: f_76n15t2(4v)7-02-09
? 2009 ixys corporation, all rights reserved IXFA76N15T2 ixfp76n15t2 fig. 14. resistive turn-on rise time vs. drain current 17 18 19 20 21 22 30 40 50 60 70 80 90 100 110 120 130 140 150 160 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 5 ? v gs = 10v v ds = 75v fig. 15. resistive turn-on switching times vs. gate resistance 16 17 18 19 20 21 22 4 6 8 101214161820 r g - ohms t r - nanoseconds 14 15 16 17 18 19 20 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 76a, 152a fig. 16. resistive turn-off switching times vs. junction temperature 13.0 13.5 14.0 14.5 15.0 15.5 16.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 18 20 22 24 26 28 30 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 75v i d = 76a, 152a fig. 17. resistive turn-off switching times vs. drain current 11 12 13 14 15 16 17 18 30 40 50 60 70 80 90 100 110 120 130 140 150 160 i d - amperes t f - nanoseconds 20 22 24 26 28 30 32 34 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 75v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 16 17 18 19 20 21 22 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 ? v gs = 10v v ds = 75v i d = 76a i d = 152a fig. 18. resistive turn-off switching times vs. gate resistance 10 11 12 13 14 15 16 17 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 23 24 25 26 27 28 29 30 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 76a i d = 152a
ixys reserves the right to change limits, test conditions, and dimensions. IXFA76N15T2 ixfp76n15t2 ixys ref: f_76n15t2(4v)7-02-09 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - second z (th)jc - oc / w
|
